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Yb:YAG(Ytterbium Doped : Yttrium Aluminium Garnet) shows great promise as a high power laser material. Yb:YAG's advantage is a wide pump band and an excellent emission cross section. It is ideal for diode pumping. The broad absorption band enables Yb:YAG to maintain uninterrupted pump efficiency across the typical thermal shift of diode output. High efficiency means a relatively small dimension Yb:YAG laser crystal will produce high power output. Based on the YAG host crystal, Yb:YAG can be quickly integrated into the laser design process. This combination of properties enables straightforward elegant laser designs, and allows high powered lasers to be manufactured more easily.

Yb-dopant concentration: 0.2 ~ 30at%
Diameter: 20 mm ( 0.0/ -0.025mm)
Length: 1~70mm /-0.05mm
Coating specification: a) AR @ 940nm or HR @940nm;b) AR @ 1053nm or AR @1030nm or HR @1053nm
Parallelism: < 10 arc sec
Perpendicularity: < 15 arc min
Chamfer: 0.15mmx45
Barrel finish: ground or polished
Wavefront Distortion: <λ/10 per inch at 632.8nm
Surface flatness: <λ/10 at 632.8nm
Surface quality: S/D better than 20/10
Clear aperture: Central 95%

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