S3759Si PIN photodiode

Si PIN photodiode for visible to infrared photometry

 

The S3759 is a Si PIN photodiode developed to detect and measure infrared energy emitted from YAG lasers (1.06 um). Compared to standard Si photodiodes, the S3759 delivers exceptionally high sensitivity of 0.38 A/W at 1.06 um. The PIN structure allows high-speed response and low capacitance. The photosensitive area is as large as φ5 mm, making optical axis alignment easier.

 

Features
-High sensitivity in infrared region: 0.38 A/W (λ=1.06 um)
-High-speed response: tr=12.5 ns (VR=100 V)
-Low capacitance: Ct=10 pF (VR=100 V)
-Large active area: φ5 mm
-High reliability: TO-8 metal package

Photosensitive area： φ5 mm
Number of elements：1
Package：Metal
Package category：TO-8
Spectral response range：360 to 1120 nm
Peak sensitivity wavelength (typ.)：980 nm
Photosensitivity (typ.) ： 0.7 A/W
Dark current (max.)：10000 pA
Terminal capacitance (typ.)： 10 pF
Measurement condition：Ta=25 ℃, Typ., unless otherwise noted, 
 Photosensitivity: λ=1060 nm, Dark current: VR==100 V, Terminal capacitance: VR=100 V, f=1 MHz




$99.00

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