Details:
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution
Large photosensitive area Si PIN photodiode
Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Low capacitance
-High-speed response
-High stability
-Good energy resolution
Photosensitive area | 30 × 3 mm |
Number of elements | 1 |
Package | Ceramic |
Reverse voltage (max.) | 100 V |
Spectral response range | 340 to 1100 nm |
Peak sensitivity wavelength (typ.) | 960 nm |
Photosensitivity (typ.) | 0.66 A/W |
Dark current (max.) | 10000 pA |
Cutoff frequency (typ.) | 40 MHz |
Terminal capacitance (typ.) | 40 pF |
Measurement condition | Ta=25 ℃, Typ., unless otherwise noted, |
Current Reviews: 0