Enhanced near IR sensitivity, using a MEMS techonology
The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers signifi cantly higher sensitivity than our previous product (S5821).
Photosensitive area
φ1.2 mm
Number of elements
1
Package
Metal
Package category
TO-18
Cooling
Non-cooled
Reverse voltage (max.)
20 V
Spectral response range
360 to 1140 nm
Peak sensitivity wavelength (typ.)
980 nm
Photosensitivity (typ.)
0.5 A/W
Dark current (max.)
2000 pA
Rise time (typ.)
10 μs
Terminal capacitance (typ.)
4 pF
Measurement condition
Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=1060 nm, Dark current: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz