Photodiode with Wavelength Range 340 to 1100 nm, Capacitance 40 pF, Dark Current 2 to 6 nA, Responsivity/Photosensitivity 0.2 to 0.66 A/W.
hamamatsu official website Si PIN photodiode S3590-08.
Datasheet PDF as following.
Part Number: S3590-08
Manufacturer:Hamamatsu Photonics
Description:Silicon PIN photodiode from 340 to 1100 nm
BeamQ Hamamatsu S3590-08 Photodiode Si .
Application: Scintillation detection, Hodoscopes, TOF counters, Radiation detection, X-ray detection
General Parameters
Cut-Off Frequency:40 MHz
Noise equivalent power(NEP):3.8 x 10-14 W/Hz
Package:Surface Mount, Ceramic
Package Type:Surface Mount, Ceramic
Photodetector Type:PIN
Operation Mode:Photoconductive
Wavelength Range:340 to 1100 nm
Photodiode Material:Silicon
Power Dissipation:100 mW
Reverse Voltage:100 V
Short Circuit Current:100 µA
Capacitance:40 pF
Dark Current:2 to 6 nA
Responsivity/Photosensitivity:0.2 to 0.66 A/W
Physical Properties
Active Area:10 x 10 mm
Window Material: Epoxy resin
Temperature
Operating Temperature display:-20 to 60 Degree C
Storage Temperature:-20 to 80 Degree C
Temperature Coefficient:1.12 times/Degree C
