IPD200N15N3 G Discrete Semiconductor Transistors FETs MOSFETs
IPD200N15N3 G Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Series
OptiMOS
Package
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
150 V
Current - Continuous Drain (Id) 25
50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
8V, 10V
Rds On (Max) Id, Vgs
20mOhm 50A, 10V
Vgs(th) (Max) @ Id
4V 90µA
Gate Charge (Qg) (Max) @ Vgs
31 nC 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1820 pF @ 75 V
FET Feature
-
Power Dissipation (Max)
150W (Tc)
Operating Temperature
-55~ 175 (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO252-3
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number
IPD200N
