Laser Components USA Inc. has announced the IG22is, an extended InGaAs detector for shortwave-infrared spectroscopy applications.
HORIBA Scientific announces a new generation of Symphony liquid nitrogen cooled InGaAs NIR linear array detectors offering increased sensitivity ideal for low light measurements. The HP series is available with standard and extended spectral range sensors.
Ion-implanted
InGaAs single quantum well semiconductor saturable absorber mirrors for passive mode-locking
InGaAs Photodiodes Sellers
Large Area InGaAs photodiodes for instrumentation and sensing applications with excellent responsivity in the wavelength region 800nm-1700nm. Photosensitive are come from 500um to 5000um.
High speed InGaAs photodiodes for high speed analog and digital communication systems, LANs, FDDI, instrumentation, and sensing applications. Low dark current, low capacitance photodiode and photosensitive available from 50um to 300um.
All devices are fabricated with planar-passivated technology and photosensitive surface are broadband AR-coated. Several packages and Evaluation Boards available.
One of the many challenges for the IC developers is to change the channel material to increase transistor mobility. But what about manufacturing? Can LED-style epitaxy be migrated to high-volume silicon manufacturing?
IR Detectors
Laser Components GmbH
IR DetectorsLaser Components GmbH has announced the IG19 and IA35 IR detectors.
The IG19 is an x-InGaAs photodiode with a peak wavelength of 1.75 μm, developed for applications that cannot be spectrally fulfilled with a regular InGaAs photodiode. The IG19X1000S4i has a 1-mm chip diameter in a TO-46 transistor outline housing.
The IA35 is a heterostructure photodiode on an InAs substrate with a wide peak of 2.8 μm. The IA35S500S4i has a 0.5-mm chip designed for uncooled operation and a spectral range of up to 3.5 μm.