Large photosensitive area Si PIN photodiode
Features-Low capacitance-High-speed response-High stability-Good energy resolution-Sensitivity matching with BGO and CsI(TI) scintillators
Photosensitive area：10 × 10 mm
Number of elements：1
Package：Ceramic
Reverse voltage (max.)：100 V
Spectral response range：340 to 1100 nm
Peak sensitivity wavelength (typ.)：960 nm
Photosensitivity (typ.)：0.66 A/W
Dark current (max.)：6000 pA
Cutoff frequency (typ.)：40 MHz
Terminal capacitance (typ.)：40 pF
Measurement condition：Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz
Spectral response：
Dimensional outline (unit: mm)
