1120nm IR Laser Solid State Semiconductor Infrared Laser Output Power 1mW-100mW

1120nm infrared semiconductor laser 1~100mW 


Ultra-compact, long life, low cost, simple operation.
It is used for scientific experiments, optical instruments, optical sensors, and measurements
volume, communications, spectrum analysis
Wait.

Wavelength (nm):1120              
Warm-up Time (minutes):<10
Working Mode:CW  
Aperture Position (mm):50
Output Power (mW):>10,20...100    
Operation Temperature (℃):10~35
Power Stability(rms, over 4 hours):<1%, <2%, <3%     
Dimensions (L×W×H, mm):180 x 50 x 63.5
Transverse:Near TEM00    
External Modulation:VD-VIB
Beam Quality (M2 factor)         
Expected Lifetime (hours):10000
Beam Diameter at Aperture (mm):~3.0    
Warranty Time:1 year

 

Download the datasheet as following,

Datasheet for DPSS 1120nm Laser

 

 

 

High power 1120 nm-diode lasers with highly strained InGaAs QWs

 

 

$6,800.00

Add to Cart: