AlGaInP/GaInP red semiconductor laser epitaxial wafer
Epitaxial wafers of custom sizes and thicknesses are available.
Some parameters can be customized according to customer requirements.
3/4 inch diameter
Thickness 450+-25um
PL wavelength 630-670nm
Surface Orientation (100) 15 Off Toward
Positioning Edge Standard US
Substrate EPD <500 cm-2
Name Material Thickness Doping Concentration (cm-3)
Ohmic contact layer GaAs 2000~3000 >1E+19
Band gap transition layer GaInP 200~500 1~5E+18
P confinement layer AlInP 7000~9000 1~2E+18
Etch barrier layer GaInP ~100 1~2E+18
P confinement layer AlInP 1000~2000 1~2E+18
Waveguide layer AlGaInP 500~1500 -
Active area AlGaInP/GaInP ~200 -
Waveguide layer AlGaInP 500~1500 -
N confinement layer AlInP 8000~10000 0.5~1E+18
Transition layer GaAs ~3000 1~4E+18
