850nm IR APD Avalanche Photodiode ROSA. APD ( avalanche photodiode ) is a highly sensitive type of photodiode, which in general are semiconductor diodes that exploit the photoelectric effect to convert light into electricity. APDs use materials and a structure optimised for operating with high reverse bias, approaching the reverse breakdown voltage, such that charge carriers generated by the photoelectric effect are multiplied by an avalanche breakdown; thus they can be used to detect relatively small amounts of light.
Long wavelength operation
3 pin TO package
Low dark current
Excellent reliability compliance to GR-468-CORE
Compliance to RoHS standard
Applications:
RADAR
Laser range finder
Laser alarming
Download the Datasheet of 850nm IR APD Avalanche Photodiode ROSA.
Parameter Symbol Min. Max. Unit
Forward current IF 1 mA
Reverse voltage VR 0.9×VBR V
Storage Temperature Ts -45 +100 ℃
Operating Temperature Top -45 +85 ℃
Optical Wavelength λ - 400 - 1100 nm
Breakdown Voltage Vbr Tc=25℃ Id=10uA, 80 - 200 V
Dark Current Id Tc=25℃ ,M=100 - 0.3 2.0 nA
Responsivity Re λ=850nm, VR=0.9×VBR 40 50 - A/W
Total capacitance Ctot M=100,f=1MHz - 2.0 4.0 pF
