830nm Single Emitter Laser Diode
830nm Single Emitter Laser Diode


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Single emitter semiconductor laser provide the laser with high power, high brightness and stability. The range of wavelength cover 830nm. The chip from the famous vendor have high efficiency, high reliability and longer life time. Different technology of package are available which meets the specific requirements of the customer.


Laser Characteristics: 830nm 1W, 830nm 3W
Output Power(W): 1.0, 3.0
Operating Current(A): 1.1, 3.0
Operating Voltage(V): 1.80
Threshold Current(A): 0.40, 0.35
Wavelength(nm): 830 +- 10
Spectral Width(FWHM) (nm): 3.0
Wavelength Temperature Coeff.(nm/C):0.3
Slope Efficiency (W/A): >1.0
Power Conversion Efficiency: >50%
Parallel to junction(Deg): 8
Perpendicular to juncticon (Deg): 8
Polarization: TE
Maximum Reverse Voltage(V): <2.5

Key Applications:

Solid-state laser pumping
Material processing
Medical/Life and health sciences

Dimensions Diagram:

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