Details: BCT-mount Laser Diode with 10000mW 10W 808nm Infrared IR Laser Diode
Features:
●Output power：10000mW ( 10W )
●Efficient quantum well structure
●Center Wavelength：808nm
●Package：BCT-mount
●Light beam shaping
Absolute Maximum Ratings(T=25℃)
Parameter | Symbol | Unit | Min | Max | Note |
Reverse Voltage | Vr | V | - | 2 | - |
Operating Temperature | To | ℃ | 10 | 30 | - |
Storage Temperature | Tstg | ℃ | 10 | 85 | - |
Solder Temperature | Stemp | ℃ | - | 260 | 10 seconds max |
Electro-Optical Characteristics(T=25℃) |
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| Parameter | Symbol |
| Unit |
| Min |
| Typ |
| Max |
|
| Test Condition |
| |
| Optical output power | Po |
| mW |
| 10000 |
| - |
| - |
|
| Iop=12000mA |
| ||
| Center wavelength | λc |
| nm |
| 798 |
| 808 |
| 818 |
|
| Po=10000mW, 25℃ |
| ||
| Spectral width | Δλ |
| nm |
| - |
| - |
| 5 |
|
| FWHM, Po=10000mW |
| ||
| Threshold current | Ith |
| mA |
| - |
| 2000 |
| 2200 |
| - |
|
| ||
| Operating current | Iop |
| mA |
| - |
| 10000 |
| 12000 |
| - |
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| ||
| Operating voltage | Vf |
| V |
|
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| 2.0 |
| 2.2 |
|
| Po=10000mW |
| ||
| Slope Efficiency | η |
| W/A |
| 1.05 |
| 1.2 |
| - |
| - |
|
| ||
| Beam divergence | θ⊥×θ∥ | º |
| - |
| 10×12 |
| - |
|
| FWHM |
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| (fast axis collimated） |
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| Beam divergence | θ⊥×θ∥ | º |
| - |
| 40×12 |
| - |
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