808 nm BCT-mount Laser Diode with 10000 mW 10W Power Output

BCT-mount Laser Diode with 10000mW 10W 808nm Infrared IR Laser Diode

Features:

●Output power：10000mW ( 10W )
●Efficient quantum well structure 
●Center Wavelength：808nm 
●Package：BCT-mount
●Light beam shaping

Absolute Maximum Ratings(T=25℃)

 

Parameter

Symbol

Unit

Min

Max

Note

Reverse Voltage

Vr

V

-

2

-

Operating Temperature

To

℃

10

30

-

Storage Temperature

Tstg

℃

10

85

-

Solder Temperature

Stemp

℃

-

260

10 seconds max



Electro-Optical Characteristics(T=25℃)

 

 

 

 

 

 

Parameter

Symbol

 

Unit

 

Min

 

Typ

 

Max

 

 

Test Condition

 

 

Optical output power

Po

 

mW

 

10000

 

-

 

-

 

 

Iop=12000mA

 

 

Center wavelength

λc

 

nm

 

798

 

808

 

818

 

 

Po=10000mW, 25℃

 

 

Spectral width

Δλ

 

nm

 

-

 

-

 

5

 

 

FWHM, Po=10000mW

 

 

Threshold current

Ith

 

mA

 

-

 

2000

 

2200

 

-

 

 

 

Operating current

Iop

 

mA

 

-

 

10000

 

12000

 

-

 

 

 

Operating voltage

Vf

 

V

 

 

 

2.0

 

2.2

 

 

Po=10000mW

 

 

Slope Efficiency

η

 

W/A

 

1.05

 

1.2

 

-

 

-

 

 

 

Beam divergence

θ⊥×θ∥

º

 

-

 

10×12

 

-

 

 

FWHM

 

 

(fast axis collimated）

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Beam divergence

θ⊥×θ∥

º

 

-

 

40×12

 

-

 







$390.00

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