800nm-2600nm 0.3mm InGaAs PIN photodiode
800nm-2600nm 0.3mm InGaAs PIN photodiode

Price:   $289.00

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Details:
800nm-2600nm 0.3mm InGaAs PIN photodiode

Features: 
 Low noise, High reliability
 800-2600nm wide wavelength range
 Active diameter 0.3mm
 Hermetic package TO46 Can or with receptacle or with fiber coupling

Applications:

Gas Analyzer

Environment measurement

Optical sensor, Temperature sensing

  Covert IR sensing, Spectrography

Medical and Chemical analysis

Optical power meter, Space light detect equipment

Absolute maximum ratings:

 

parameter

symbol

value

unit

Operating temperature

Top

-40+85

Storage temperature

Tstg

-50+125

Forward current

If

5

mA

Reverse voltage

VR

0.4

V

Soldering temperature(time)

Ts10s

260


Electrical and optical characteristics:(T=25)

 

parameter

symbol

unit

Valuetyp.

Active diameter

Φ

mm

0.3

Spectral range

λ

nm

800-2600

Responsivity

Re (VR=0.2V,λ=850nm )

mA/mW

0.21

 

Re (VR=0.2V,λ=1310nm )

mA/mW

0.45

 

Re(VR=0.2V,λ=2300nm)

mA/mW

1.3

 

Re(VR=0.2V,λ=2600nm)

mA/mW

0.23

Response time

Tr (RL=50Ω, VR=0.2V)

ns

12

Dark current

ID(VR=0V)

nA

40

 

ID(VR=0.2V)

nA

300

Reverse Breakdown voltage

VBR (IR=10uA)

V

2

Junction capacitance

Cj (f=1MHz, VR=0V)

pF

90

 

Cj (f=1MHz, VR=0.2V)

pF

70

Saturated Optical Power

Ps(VR =0.2V)

mW

4

Operating voltage

VR

V

0-0.2

Shunt impedance

Rsh (VR=10mV)

120

package

Hermetic package TO46 Can or with receptacle or fiber coupling

 

NOTICE: The above product specifications are subject to change without notice.




800nm-2600nm 0.3mm InGaAs PIN photodiode datasheet 





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