800nm-2600nm 0.3mm InGaAs PIN photodiode
Features:
Low noise, High reliability
800-2600nm wide wavelength range
Active diameter 0.3mm
Hermetic package TO46 Can or with receptacle or with fiber coupling
Applications:
Gas Analyzer
Environment measurement
Optical sensor, Temperature sensing
Covert IR sensing, Spectrography
Medical and Chemical analysis
Optical power meter, Space light detect equipment
Absolute maximum ratings:
parameter | symbol | value | unit |
Operating temperature | Top | -40～+85 | ℃ |
Storage temperature | Tstg | -50～+125 | ℃ |
Forward current | If | 5 | mA |
Reverse voltage | VR | 0.4 | V |
Soldering temperature(time) | Ts（10s） | 260 | ℃ |
Electrical and optical characteristics:(T=25℃)
parameter | symbol | unit | Value（typ.） |
Active diameter | Φ | mm | 0.3 |
Spectral range | λ | nm | 800-2600 |
Responsivity | Re (VR=0.2V,λ=850nm ) | mA/mW | 0.21 |
| Re (VR=0.2V,λ=1310nm ) | mA/mW | 0.45 |
| Re(VR=0.2V,λ=2300nm) | mA/mW | 1.3 |
| Re(VR=0.2V,λ=2600nm) | mA/mW | 0.23 |
Response time | Tr (RL=50Ω, VR=0.2V) | ns | 12 |
Dark current | ID(VR=0V) | nA | 40 |
| ID(VR=0.2V) | nA | 300 |
Reverse Breakdown voltage | VBR (IR=10uA) | V | 2 |
Junction capacitance | Cj (f=1MHz, VR=0V) | pF | 90 |
| Cj (f=1MHz, VR=0.2V) | pF | 70 |
Saturated Optical Power | Ps(VR =0.2V) | mW | 4 |
Operating voltage | VR | V | 0-0.2 |
Shunt impedance | Rsh (VR=10mV) | KΩ | 120 |
package | Hermetic package TO46 Can or with receptacle or fiber coupling |
NOTICE: The above product specifications are subject to change without notice.
800nm-2600nm 0.3mm InGaAs PIN photodiode datasheet
