800-2100nm 300um InGaAs PIN Photodiode
800-2100nm 300um InGaAs PIN Photodiode

Price:   $159.00

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 Low noise, High reliability
 Top illumination planar PIN PD
 Active diameter 0.3mm
 Cut off wavelength to 2.1um

 Gas Analyzer
 Environment measurement
 Science analysis and experiment
 Space light detect equipment
 Optical power meter
 NIR photometry
 Optical fiber sensor

Absolute maximum ratings:
parameter symbol value unit
Operating temperature Top -40~+85 ℃
Storage temperature Tstg -50~+125 ℃
Forward current If 10 mA
Reverse voltage VR 1 V
Power dissipation Wp 100 mW
Soldering temperature(time) Ts(10s) 260 ℃

Electrical and optical characteristics:(T=25℃, VR=0.5V) 

parameter symbol unit Value(typ.)
Active diameter Φ mm 0.3
Spectral range λ nm 800-2100
Responsivity Re (VR=0.5V,λ=1310nm ) mA/mW 0.7
Re(VR=0.5V,λ=1600nm) mA/mW 1.0
Response time Tr (RL=50Ω, VR=0.5V) ns 3
Dark current ID(VR=0.5V) nA 8
Reverse Breakdown voltage VBR (IR=10uA) V 1
Junction capacitance Cj (f=1MHz, VR=0.5V) pF 20
Operating voltage VR v 0-0.5
Shunt impedance Rsh (VR=10mV) MΩ 0.9

package TO-46

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