785 nm Wavelength Stabilized High Temperature Resistance Laser Diode 200mW is based on quantum well epitaxial layer growth and a highly reliable ridge waveguide structure with external grating feedback. This singletransverse mode laser diode features high optical output power with a wavelength stabilized spectrum having single frequency. The 785nm laser diode provides a compact TO9 5.6 mm laser source for Raman spectroscopy, instrumentation and pumping applications.
Specifications:
LD Reverse Voltage (Max):2 VOutput Wavelength:785nm/+-3nmOutput power: 200mWAbsolute Max Current: 200mAWorking Voltage:DC=2.2V-3VOperating Temperature: -10 to 70Storage Temperature:-40 to 80Pin Code:E
High Temperature Resistance
Note*: Operating Temperature = wavelength stabilized temperature range (ΔTstabilized), between 15 and 30