400-1100nm 1.2mm Silicon PIN Photodiode InGaAs Photodiode
400-1100nm 1.2mm Silicon PIN Photodiode InGaAs Photodiode

Price:   $29.99

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Details: 400-1100nm 1.2mm Silicon PIN Photodiode InGaAs Photodiode

Features:

High reliability, low dark current

400-1100nm spectral range

1064nm responsivity up to 0.27mA/mW

Active diameter 1.2x1.2mm

Hermetic TO46 Can or with receptacle or with fiber coupling

Applications: 
Optical sensor and Optical power meter 

Laser finding range and laser lidar

Industrial automatic control

IR/ Laser light Monitoring

Fluorescence detector

Medical equipment

parameter    
Operating temperature: -40~+85 
Storage temperature: -40~+100 
Forward current: 10 mA
Reverse voltage: 30 V
Soldering temperature(time): (10s)260℃

Electrical and optical characteristics:(T=25℃)

parameter 
Active diameter: 1.2x1.2mm
Spectral range : 400-1100nm
Responsivity: 0.15mA/mW ( Re(VR=5V,λ=405nm )
        0.30mA/mW ( Re(VR=5V,λ=650nm)
        0.55mA/mW ( Re(VR=5V,λ=850nm) 
        0.27mA/mW Re(VR=5V,λ=1064nm) 
Response time: 1.4ns 
Dark current: 0.2pA
         
Reverse Breakdown voltage: 80V
Junction capacitance: 50pF
Saturated Optical Power : 15mW 
Operating voltage : 0-20V
Shunt resistance : 50GΩ 
Package Hermetic TO46 Can or with receptacle or with fiber coupling





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