1450nm infrared semiconductor laser 1~100mW
Ultra-compact, long life, low cost, simple operation
It is used for scientific experiments, optical instruments, optical sensors, and measurements volume, communications, spectrum analysis
Wait.
Wavelength (nm)：1450
Warm-up Time (minutes)：<10
Working Mode：CW
Aperture Position (mm)：50
Output Power (mW)：>10,20...100
Operation Temperature (℃)：10~35
Power Stability(rms, over 4 hours)：<1%, <2%, <3%
Dimensions (L×W×H, mm)：180 x 50 x 63.5
Transverse：Near TEM00
External Modulation：VD-VIB
Beam Quality (M2 factor)
Expected Lifetime (hours)：10000
Beam Diameter at Aperture (mm)：~3.0
Warranty Time：1 year
Download the Datasheet
