1413nm infrared semiconductor laser 1~300mW
Ultra-compact, long life, low cost, simple operation
It is used for scientific experiments, optical instruments, optical sensors, and measurements
volume, communications, spectrum analysis etc.
Wavelength (nm)：1413
Warm-up Time (minutes)：<10
Working Mode：CW
Aperture Position (mm)：50
Output Power (mW)：>10,20...300
Operation Temperature (℃)：10~35
Power Stability(rms, over 4 hours)： <3% ，<5%, <10%,
Dimensions (L×W×H, mm)：180 x 50 x 63.5
Transverse：Near TEM00
External Modulation：VD-VIB
Beam Quality (M2 factor)：<1.5
Expected Lifetime (hours)：10000
Beam Diameter at Aperture (mm)：~1.5
Warranty Time：1 year
Download the Datasheet
