Enhanced near IR sensitivity, using a MEMS techonology
The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers signifi cantly higher sensitivity than our previous product (S5821).
Features
- High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm)
- Photosensitive area: φ1.2 mm
- High reliability package : 2-pin TO-18
Photosensitive area | φ1.2 mm |
Number of elements | 1 |
Package | Metal |
Package category | TO-18 |
Cooling | Non-cooled |
Reverse voltage (max.) | 20 V |
Spectral response range | 360 to 1140 nm |
Peak sensitivity wavelength (typ.) | 980 nm |
Photosensitivity (typ.) | 0.5 A/W |
Dark current (max.) | 2000 pA |
Rise time (typ.) | 10 μs |
Terminal capacitance (typ.) | 4 pF |
Measurement condition | Ta=25 ℃, Typ., unless otherwise noted, |
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