S12028IR-enhaned Si PIN photodiode

$99.00
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Enhanced near IR sensitivity, using a MEMS techonology

 

The S12028 is Si PIN photodiode that offers enhanced near infrared sensitivity due to a MEMS structure formed on the backside of the photodiode. The S12028 offers signifi cantly higher sensitivity than our previous product (S5821).

 

Features
- High sensitivity in near infrared range: 0.5 A/W (λ=1060 nm)
- Photosensitive area: φ1.2 mm
- High reliability package : 2-pin TO-18

Photosensitive area

φ1.2 mm

Number of elements

1

Package

Metal

Package category

TO-18

Cooling

Non-cooled

Reverse voltage (max.)

20 V

Spectral response range

360 to 1140 nm

Peak sensitivity wavelength (typ.)

980 nm

Photosensitivity (typ.)

0.5 A/W

Dark current (max.)

2000 pA

Rise time (typ.)

10 μs

Terminal capacitance (typ.)

4 pF

Measurement condition

Ta=25 ℃, Typ., unless otherwise noted, 
Photosensitivity: λ=1060 nm, Dark current: VR=10 V, Terminal capacitance: VR=10 V, f=1 MHz


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