S11499-01IR-enhanced Si PIN photodiode

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Large area, enhanced near IR sensitivity, using a MEMS technology


HAMAMATSU has developed various types of Si detectors that offer enhanced near-infrared sensitivity due to a MEMS structure formed on the back side of the photodiode. The S11499-01 is a family of Si PIN photodiodes with drastically improved sensitivity in the near infrared region at wavelengths longer than 900 nm. Compared to our conventional product, the S11499-01 has much higher sensitivity to YAG laser light (1.06 um). It also offers improved temperature characteristics of sensitivity at wavelengths longer than 950 nm.


- High sensitivity: 0.6 A/W (λ=1060 nm)
- Large active area: φ5.0 mm
- High reliability package: TO-8 metal package

Photosensitive area

φ5 mm

Number of elements




Package category




Reverse voltage (max.)

30 V

Spectral response range

360 to 1140 nm

Peak sensitivity wavelength (typ.)

1000 nm

Photosensitivity (typ.)

0.6 A/W

Dark current (max.)

10000 pA

Cutoff frequency (typ.)

15 MHz

Terminal capacitance (typ.)

33 pF

Measurement condition

Ta=25 ℃, Typ., unless otherwise noted, 
Photosensitivity: λ=1060 nm, Dark current: VR=20 V, Cutoff frequency: VR=20 V, Terminal capacitance: VR=20 V, f=1 MHz


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