S11142 Si photodiode

$99.00
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High sensitivity, direct detection of low energy (2 keV or more) electron beams

 

 

Features
-Direct detection of low energy (2 keV or more) electron beams with high sensitivity
-High gain: 1100 times (incident electron energy: 5 keV)
-Large photosensitive area size: 14 14 mm
-φ2.0 mm hole in center of photosensitive area
-4-element photodiode
-Thin ceramic package
-Uses a wiring board made of less magnetic materials

Photosensitive area: 14 x 14 mm
Number of elements4
PackageCeramic
Incident electron energy range (typ.)2 to 30 keV
Electron multiplying gain (typ.)1100
Reverse voltage (max.)20 V
Dark current (max.)25000 pA
Cutoff frequency (typ.)7 MHz
Terminal capacitance (typ.)250 pF
Measurement conditionTa=25 ℃, VR=5 V




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