InGaAs Photodiode in 3-pin Low-cost (Plastic) ROSA Package, InGaAs Photodiode in 3 pin ROSA.
155 Mb/s Receiver in Low Cost (Plastic) ROSA Package
Differential ended output
Single +3.3V operation
Wide operation temperature (0~+85)
High reliability
Suitable for 155 Mb/s applications Receptacle or pigtail module
Applications:
Telecom, Datacom and FTTX
Electrical/Optical Characteristics (Tc=25oC)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Power Supply Vcc 3.00 3.3 3.6 V
Supply Current Icc No loads 25 50 mA
Bandwidth BW 1000 1200 MHz
Low-Frequency Cut Off LF 44 kHz
Rise Time/Fall Time
Tr/tf 10% ~ 90%, P = -15
dBm
1.5 2 ns
Wavelength λ 1100 1310 1650 μm
Single Ended Output Impedance Ro 50 Ohms
Saturation Power Psat λ=1310nm -3 0 dBm
Sensitivity (BER=10-10) SEN λ=1310nm -39 -38 dBm
Maximum Differential Output
Voltage
800 mV p-p
Absolute Maximum Ratings(Tc=25oC):
Parameter Symbol Ratings Unit
Case Temperature TC -0 ~ +85 oC
Storage Temperature Tstg -40 ~ +100 oC
Load Solder Temperature and Time 260 oC, 10sec
What are the characteristics of InGaAs photodiode?
The InGaAs PIN Detectors provide high quantum efficiency from 800 nm to 1700 nm. They feature low capacitance for extended bandwidth, high resistance for high sensitivity, high linearity, and uniformity within two percent across the detector active area.
roithner laser
InGaAs PIN Photodiodes
InGaAs PDs in TO and SMD package
Spectral range from 600nm to 2200 nm, active area diameter up to 3 mm
Low dark current, high dynamic impedance
