High Power Pulsed Laser Diode 905D5S3J08-Series 325w
Features:
Nanostack devices up to 650 Waltts
Proven InGaAs/ GaAs high reliability structure
High power large -optical-cavity( LOC) structure
Excellent temperature stability
Hermetic and custom designed package
Applications:
Range finding
Surveying equipment
Weapons simulation
laser radar
Ceilometer
Optical trigger
Medical
Optical Characteristics
Wavelength of peak radiant intensity: 895 ~ 915 nm
Number of elements: 5x3
Power: 325w
Emitting area: 200x400um
Threshold: 750mA
Forward voltage: 40v
Absolute Maximum Ratings:
Max.current : 40A
Max.current for 2L: 60A
Peak reserse voltage: 6v
Pulse duration: 150ns
Temperature :
-storage -55°C to +100°C
-Operating -45°C to +85°C
Lead soldering :
-5 seconds max at: 200 °C
