Large photosensitive area Hamamatsu Si PIN photodiode
Features-Sensitivity matching with blue scintillator (LSO, GSO, etc.)-Bare chip type (unsealed)-High quantum efficiency-Low capacitance-High-speed response-High stability-Good energy resolution
Photosensitive area:10- 10 mm
Number of elements: 1
Package:Ceramic
Reverse voltage (max.):100 V
Spectral response range:340 to 1100nm
Peak sensitivity wavelength (typ.):960nm
Photosensitivity (typ.):0.58A/W
Dark current (max.):10000 pA
Cutoff frequency (typ.):40MHz
Terminal capacitance (typ.):40 pF
Measurement condition:Ta=25 ℃, Typ., unless otherwise noted,
Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz
Spectral response
Dimensional outline (unit: mm)
