Hamamatsu S3590-09 Si PIN photodiode

$390.00
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Large photosensitive area Hamamatsu Si PIN photodiode

 

 

Features
-Sensitivity matching with BGO and CsI(TI) scintillators
-Bare chip type (unsealed)
-High quantum efficiency
-Low capacitance
-High-speed response
-High stability
-Good energy resolution

Photosensitive area:10 × 10 mm
Number of elements:1
Package:Ceramic
Reverse voltage (max.):100 V
Spectral response range:340 to 1100 nm
Peak sensitivity wavelength (typ.):960 nm
Photosensitivity (typ.):0.66 A/W
Dark current (max.):6000 pA
Cutoff frequency (typ.):40 MHz
Terminal capacitance (typ.):40 pF
Measurement condition:Ta=25 ℃, Typ., unless otherwise noted, Photosensitivity: λ=λp, Dark current: VR=70 V, Cutoff frequency: VR=70 V, Terminal capacitance: VR=70 V, f=1 MHz

Spectral response:

Dimensional outline (unit: mm)





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