850nm IR Semiconductor Laser Diode

850nm IR Semiconductor Laser Diode


Feature:
  • Power stability, adjustable, easy to operate;
  • Original LD, reliable performance, long life;
  • Power supply with overheating, current-limiting protection circuit, can be external high-speed modulation;
Application:
  • spectrum analysis,
  • material analyzing, 
  • Biological Engineering, 
  • photoelectric testing, 
  • medical treatment, etc.
Wavelength (nm): 850±5
Spectral Linewidth (nm): <3
Output Power (mW): 1~1500
Operating Mode: CW
Transverse Mode: Near TE00
Beam Divergence (full angle, mrad): <6
Beam Diameter at Aperture (mm): ~5 x 5
Beam pointing stability(mrad): <0.05
Power Stability (RMS, over 4 hours): <1%,<3%
Aperture Position (mm): 20, 23

Laser Head:  Dimensions (L×W×H, mm): 102 x 35 x 35,140 x 49 x 42
                    Net Weight (kg):  0.3, 0.5
                    Dimensions (L×W×H, mm): 150 x 110 x 56
                    Net Weight (kg): 0.6
Cooling System: TEC
Power Supply: 90~240VAC@50Hz
Modulating Repetition: 50KHz TTL / 10KHz Analogue
Warm-up Time (minutes): <5
Operation Temperature (℃) : 0~40
Expected Lifetime (hours): >10000
Warranty Time: 1 year



$2,999.00

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