800-2100nm InGaAs PIN Photodiode 300um
800-2100nm InGaAs PIN Photodiode 300um

Price:   $159.00

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Details:

800-2100nm InGaAs PIN Photodiode 300um TO-46

Features:
package TO-46
Low noise, High reliability
Top illumination planar PIN PD
Active diameter 0.3mm
Cut off wavelength to 2.1um

Applications:

Gas Analyzer
Environment measurement
Science analysis and experiment
Space light detect equipment
Optical power meter
NIR photometry
Optical fiber sensor

Absolute maximum ratings:

parameter symbol value unit
Operating temperature Top -40~+85 ℃
Storage temperature Tstg -50~+125 ℃
Forward current If 10 mA
Reverse voltage VR 1 V
Power dissipation Wp 100 mW
Soldering temperature(time) Ts(10s) 260 ℃
Electrical and optical characteristics:(T=25℃, VR=0.5V)
parameter symbol unit Value(typ.)
Active diameter Φ mm 0.3
Spectral range λ nm 800-2100
Responsivity Re (VR=0.5V,λ=1310nm ) mA/mW 0.7
Re(VR=0.5V,λ=1600nm) mA/mW 1.0
Response time Tr (RL=50Ω, VR=0.5V) ns 3
Dark current ID(VR=0.5V) nA 8
Reverse Breakdown voltage VBR (IR=10uA) V 1
Junction capacitance Cj (f=1MHz, VR=0.5V) pF 20
Operating voltage VR v 0-0.5
Shunt impedance Rsh (VR=10mV) MΩ 0.9

Download the datasheet specs for 800-2100nm IR InGaAs Photodiode 300um


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