785 nm Wavelength Stabilized High Temperature Resistance Laser Diode 200mW

$39.00
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785 nm Wavelength Stabilized High Temperature Resistance Laser Diode 200mW is based on quantum well epitaxial layer growth and a highly reliable ridge waveguide structure with external grating feedback. This singletransverse mode laser diode features high optical output power with a wavelength stabilized spectrum having single frequency. The 785nm laser diode provides a compact TO9 5.6 mm laser source for Raman spectroscopy, instrumentation and pumping applications.



Specifications:

LD Reverse Voltage (Max):2 V
Output Wavelength:785nm/3nm
Output power: 200mW
Absolute Max Current: 200mA
Working Voltage: DC=2.2V-3V
Operating Temperature: -10C to 70 C
Storage Temperature:-40C to 80 C
Pin Code:E

High Temperature Resistance

Note*: Operating Temperature = wavelength stabilized temperature range (ΔTstabilized), between 15C and 30C









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