400-1100nm 1.2mm Silicon PIN Photodiode InGaAs Photodiode

Features:

High reliability, low dark current

400-1100nm spectral range

1064nm responsivity up to 0.27mA/mW

Active diameter 1.2x1.2mm

Hermetic TO46 Can or with receptacle or with fiber coupling

Applications: 

Optical sensor and Optical power meter 

Laser finding range and laser lidar

Industrial automatic control

IR/ Laser light Monitoring

Fluorescence detector

Medical equipment

parameter    

Operating temperature: -40～+85 ℃

Storage temperature: -40～+100 ℃

Forward current: 10 mA

Reverse voltage: 30 V

Soldering temperature(time): （10s）260℃

Electrical and optical characteristics:(T=25℃)

parameter 

Active diameter: 1.2x1.2mm

Spectral range : 400-1100nm

Responsivity: 0.15mA/mW ( Re(VR=5V,λ=405nm )

        0.30mA/mW ( Re(VR=5V,λ=650nm)

        0.55mA/mW ( Re(VR=5V,λ=850nm) 

        0.27mA/mW Re(VR=5V,λ=1064nm) 

Response time: 1.4ns 

Dark current: 0.2pA

         

Reverse Breakdown voltage: 80V

Junction capacitance: 50pF

Saturated Optical Power : 15mW 

Operating voltage : 0-20V

Shunt resistance : 50GΩ 

Package Hermetic TO46 Can or with receptacle or with fiber coupling