2.1μm-3μm Mid-infrared Laser Diodes 2000nm-3000nm
2.1μm-3μm Mid-infrared Laser Diodes 2000nm-3000nm

Price:   $2,650.00

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Details:
2.1μm-3μm mid-infrared laser diodes based on type-I optical transition on GaSb technology platform. Type-I optical transition results when an electron and a hole recombines across the effective bandgap of the quantum well in the active semiconductor material.

2 .1 μm SINGLE TE00 MODE LASER DIODES

There are three kinds of this laser diodes with output power of 60mW, 100mW, 160mW.

Pricing is as follows:

Quantity (pcs)

Wavelength (nm)

Output power (mW)

Package type

Price (EUR/pc)

Lead time (weeks ARO)

1

2100

60

C-mount, TO9

1560

2

5

2100

60

C-mount, TO9

1350

2

1

2100

100

C-mount, TO9

1850

2

5

2100

100

C-mount, TO9

1650

2

1

2100

150

C-mount

2250

2

5

2100

150

C-mount

1950

2




2 .1 μm BROAD AREA MULTIMODE LASER DIODES    
2 .7 μm SINGLE TE00 MODE LASER DIODES    
3 .0 μm SINGLE TE00 MODE LASER DIODES   


Type-I transition advantages:
High gain
Low operating voltage
Wavelength reproducibility
CW operation at RT

Laser diodes based on type-I transition combine advantages of highest optical gain and very low voltage drop ( i.e. Brolis laser diodes have operating voltages < 1 V compared to ~15 V quantum cascade lasers QCLs and ~3-5 V interband cascade lasers ICLs) resulting in extremely low input powers and uncooled room-temperature operation in continuous-wave mode. The price is only for sample. Contact us if you need bulk orders.

Additional time might be required due to export procedure. Let me know if you are interested in a formal quotation and what quantities are you looking for.

 




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