1300nm Semiconductor InGaAsP Laser Diode 5mW

1300nm semiconductor laser with high stability and long-lifetime. These products are widely used in optical communications, space communications and other fields. 1300nm laser diode used TO18 compact package with Peace mirror ball lens cap closed in two forms.

Features

• Wavelength 1300nm
• Output Power 5mW
• High Reliability
• High Efficiency

Applications

• Optical Fiber Communication
• Free-space Optical Communication

Specifications:
Optical Specification
Output Power Po 5 mW
Center Wavelength: 1300nm+-20 nm
Spectral Width:<3.0 nm
Emitting Area 4-1um
Wavelength Temperature Coefficient 0.35 nm/C
Beam Divergence: 40-20 deg
Polarization TE
Electrical Specification
Slope Efficiency:0.2 W/A
Threshold Current Ith:15 mA
Operating Current Io:40 mA
Operating Voltage Vf:1.5 V
Series Resistance Rd:8
Monitor Curency:100 mA
Package Style TO18
Absolute Maximum Ratings
Reverse Voltage Vr 2.0 V

1. High power laser diodes are high energy laser devices. It is harmful to human body and health. Never look directly into the laser output port.
2. High power laser diodes could operate in forward voltage. The reverse current and voltage should not be higher than 25µA and 3V, respectively.
3. Heavy humidity can get dew on the LD then damage the LD.
4. The generated heat must be removed in time when the LD working.
5. The high temperature will effect the performance of the products. The lifetime can also be shortened by high temperature.
6. The operating current and optical power of laser must not be higher than the given rate current and power. The excessive current would accelerate aging and shorten lifetime, even damage the LD.
7. The semiconductor laser diode is a sensitive electronic device. Please observe precaution for handling electrostatitic sensitive devices.

InGaAsP/InP laser diodes emitting at 1300 nm for optical communications.

Indium gallium arsenide phosphide

Indium gallium arsenide phosphide is a quaternary compound semiconductor material, an alloy of gallium arsenide, gallium phosphide, indium arsenide, or indium phosphide. This compound has applications in photonic devices, due to the ability to tailor its band gap via changes in the alloy mole ratios, x and y.